JT Baker® 0712-09 Ammonium Fluoride, 40%, CMOS Electronic Grade, 500Lb Poly Drum
- CMOS™ Grade
- Trace Impurity Level: 200 to 10ppb
- SEMI Grade: 1
- 500Lb Poly Drum
- Manufacturer Part No: JT-0712-09
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Details
Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
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Typical Analysis Monograph
Assay (NH4F) | 39.0 - 41.0 % | 40.3 % |
Color (APHA) | 10 max. | 5 |
pH of 1% Solution at 25°C | 6.5 - 7.0 | 6.9 |
Residue after Ignition | 5 ppm max. | < 2 ppm |
Trace Impurities (in ppm): | ||
Chloride (Cl) | 2 max. | < 2 |
Insoluble Matter | 0.5 max. | < 0.3 |
Nitrate (NO3) | 5 max. | < 1 |
Oxidizable Species (as SO3) | 1 max. | < 1 |
Phosphate (PO4) | 0.2 max. | < 0.2 |
Sulfate (SO4) | 1 max. | < 1 |
Trace Impurities (in ppb): | ||
Aluminum (Al) | 50 max. | < 5 |
Antimony (Sb) | 10 max. | < 1 |
Arsenic (As) | 20 max. | < 2 |
Arsenic and Antimony (as As) | 30 max. | < 5 |
Barium (Ba) | 10 max. | < 1 |
Beryllium (Be) | 5 max. | < 1 |
Bismuth (Bi) | 50 max. | < 10 |
Boron (B) | 20 max. | < 5 |
Cadmium (Cd) | 20 max. | < 1 |
Calcium (Ca) | 10 max. | 2 |
Chromium (Cr) | 10 max. | < 1 |
Cobalt (Co) | 10 max. | < 1 |
Copper (Cu) | 10 max. | < 1 |
Gallium (Ga) | 50 max. | < 1 |
Germanium (Ge) | 40 max. | < 10 |
Gold (Au) | 20 max. | < 5 |
Heavy Metals (as Pb) | 500 max. | < 500 |
Iron (Fe) | 50 max. | 1 |
Lead (Pb) | 50 max. | < 10 |
Lithium (Li) | 10 max. | < 1 |
Magnesium (Mg) | 10 max. | < 1 |
Manganese (Mn) | 20 max. | < 1 |
Molybdenum (Mo) | 50 max. | < 5 |
Nickel (Ni) | 50 max. | < 5 |
Niobium (Nb) | 20 max. | < 1 |
Potassium (K) | 100 max. | < 10 |
Silver (Ag) | 10 max. | < 1 |
Sodium (Na) | 50 max. | < 5 |
Strontium (Sr) | 10 max. | < 1 |
Tantalum (Ta) | 50 max. | < 5 |
Thallium (Tl) | 20 max. | < 5 |
Tin (Sn) | 50 max. | < 10 |
Titanium (Ti) | 50 max. | < 1 |
Vanadium (V) | 10 max. | < 1 |
Zinc (Zn) | 20 max. | < 1 |
Zirconium (Zr) | 5 max. | < 1 |
For Microelectronic Use |
Documents & Videos
Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
__________________________________________
__________________________________________
Typical Analysis Monograph
Assay (NH4F) | 39.0 - 41.0 % | 40.3 % |
Color (APHA) | 10 max. | 5 |
pH of 1% Solution at 25°C | 6.5 - 7.0 | 6.9 |
Residue after Ignition | 5 ppm max. | < 2 ppm |
Trace Impurities (in ppm): | ||
Chloride (Cl) | 2 max. | < 2 |
Insoluble Matter | 0.5 max. | < 0.3 |
Nitrate (NO3) | 5 max. | < 1 |
Oxidizable Species (as SO3) | 1 max. | < 1 |
Phosphate (PO4) | 0.2 max. | < 0.2 |
Sulfate (SO4) | 1 max. | < 1 |
Trace Impurities (in ppb): | ||
Aluminum (Al) | 50 max. | < 5 |
Antimony (Sb) | 10 max. | < 1 |
Arsenic (As) | 20 max. | < 2 |
Arsenic and Antimony (as As) | 30 max. | < 5 |
Barium (Ba) | 10 max. | < 1 |
Beryllium (Be) | 5 max. | < 1 |
Bismuth (Bi) | 50 max. | < 10 |
Boron (B) | 20 max. | < 5 |
Cadmium (Cd) | 20 max. | < 1 |
Calcium (Ca) | 10 max. | 2 |
Chromium (Cr) | 10 max. | < 1 |
Cobalt (Co) | 10 max. | < 1 |
Copper (Cu) | 10 max. | < 1 |
Gallium (Ga) | 50 max. | < 1 |
Germanium (Ge) | 40 max. | < 10 |
Gold (Au) | 20 max. | < 5 |
Heavy Metals (as Pb) | 500 max. | < 500 |
Iron (Fe) | 50 max. | 1 |
Lead (Pb) | 50 max. | < 10 |
Lithium (Li) | 10 max. | < 1 |
Magnesium (Mg) | 10 max. | < 1 |
Manganese (Mn) | 20 max. | < 1 |
Molybdenum (Mo) | 50 max. | < 5 |
Nickel (Ni) | 50 max. | < 5 |
Niobium (Nb) | 20 max. | < 1 |
Potassium (K) | 100 max. | < 10 |
Silver (Ag) | 10 max. | < 1 |
Sodium (Na) | 50 max. | < 5 |
Strontium (Sr) | 10 max. | < 1 |
Tantalum (Ta) | 50 max. | < 5 |
Thallium (Tl) | 20 max. | < 5 |
Tin (Sn) | 50 max. | < 10 |
Titanium (Ti) | 50 max. | < 1 |
Vanadium (V) | 10 max. | < 1 |
Zinc (Zn) | 20 max. | < 1 |
Zirconium (Zr) | 5 max. | < 1 |
For Microelectronic Use |