JT Baker® 0712-09 Ammonium Fluoride, 40%, CMOS Electronic Grade, 500Lb Poly Drum

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  • CMOS™ Grade
  • Trace Impurity Level: 200 to 10ppb
  • SEMI Grade: 1
  • 500Lb Poly Drum
  • Manufacturer Part No: JT-0712-09
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Item Number: JTB-0712-09

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Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
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Typical Analysis Monograph

Assay (NH4F) 39.0 - 41.0 %
Color (APHA) 10 max.
pH of 1% Solution at 25°C 6.5 - 7.0
Residue after Ignition 5 ppm max.
Trace Impurities (in ppm):
Chloride (Cl) 2 max.
Insoluble Matter 0.5 max.
Nitrate (NO3) 5 max.
Oxidizable Species (as SO3) 1 max.
Phosphate (PO4) 0.2 max.
Sulfate (SO4) 1 max.
Trace Impurities (in ppb):
Aluminum (Al) 50 max.
Antimony (Sb) 10 max.
Arsenic (As) 20 max.
Arsenic and Antimony (as As) 30 max.
Barium (Ba) 10 max.
Beryllium (Be) 5 max.
Bismuth (Bi) 50 max.
Boron (B) 20 max.
Cadmium (Cd) 20 max.
Calcium (Ca) 10 max.
Chromium (Cr) 10 max.
Cobalt (Co) 10 max.
Copper (Cu) 10 max.
Gallium (Ga) 50 max.
Germanium (Ge) 40 max.
Gold (Au) 20 max.
Heavy Metals (as Pb) 500 max.
Iron (Fe) 50 max.
Lead (Pb) 50 max.
Lithium (Li) 10 max.
Magnesium (Mg) 10 max.
Manganese (Mn) 20 max.
Molybdenum (Mo) 50 max.
Nickel (Ni) 50 max.
Niobium (Nb) 20 max.
Potassium (K) 100 max.
Silver (Ag) 10 max.
Sodium (Na) 50 max.
Strontium (Sr) 10 max.
Tantalum (Ta) 50 max.
Thallium (Tl) 20 max.
Tin (Sn) 50 max.
Titanium (Ti) 50 max.
Vanadium (V) 10 max.
Zinc (Zn) 20 max.
Zirconium (Zr) 5 max.
For Microelectronic Use

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Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
__________________________________________

Typical Analysis Monograph

Assay (NH4F) 39.0 - 41.0 %
Color (APHA) 10 max.
pH of 1% Solution at 25°C 6.5 - 7.0
Residue after Ignition 5 ppm max.
Trace Impurities (in ppm):
Chloride (Cl) 2 max.
Insoluble Matter 0.5 max.
Nitrate (NO3) 5 max.
Oxidizable Species (as SO3) 1 max.
Phosphate (PO4) 0.2 max.
Sulfate (SO4) 1 max.
Trace Impurities (in ppb):
Aluminum (Al) 50 max.
Antimony (Sb) 10 max.
Arsenic (As) 20 max.
Arsenic and Antimony (as As) 30 max.
Barium (Ba) 10 max.
Beryllium (Be) 5 max.
Bismuth (Bi) 50 max.
Boron (B) 20 max.
Cadmium (Cd) 20 max.
Calcium (Ca) 10 max.
Chromium (Cr) 10 max.
Cobalt (Co) 10 max.
Copper (Cu) 10 max.
Gallium (Ga) 50 max.
Germanium (Ge) 40 max.
Gold (Au) 20 max.
Heavy Metals (as Pb) 500 max.
Iron (Fe) 50 max.
Lead (Pb) 50 max.
Lithium (Li) 10 max.
Magnesium (Mg) 10 max.
Manganese (Mn) 20 max.
Molybdenum (Mo) 50 max.
Nickel (Ni) 50 max.
Niobium (Nb) 20 max.
Potassium (K) 100 max.
Silver (Ag) 10 max.
Sodium (Na) 50 max.
Strontium (Sr) 10 max.
Tantalum (Ta) 50 max.
Thallium (Tl) 20 max.
Tin (Sn) 50 max.
Titanium (Ti) 50 max.
Vanadium (V) 10 max.
Zinc (Zn) 20 max.
Zirconium (Zr) 5 max.
For Microelectronic Use

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