JT Baker® 5184-99 CLk™-228 Post-Etch Fluoropolymer Residue Remover, ALEG Grade, 413Lb Poly Drum

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  • Residue Remover for High Volume Manufacturing Applications
  • Semi-aqueous post etch treatment fluoropolymer removal chemistry. “Tunable” to customer specific requirements.
  • Metal hard mask or carbon hard mask schemes < 20nm. Ideal for bulk photoresist removal.
  • Compatible with Cu, TiN, W, and ULK (k ~ 2.0). Use of a post etch treatment polymer prevents TiFx type residues.
  • No undercut, TiN lift-off, or pattern collapse observed
  • 413Lb Poly Drum
  • Manufacturer Part No: JT-5184-99
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Item Number: JTB-5184-99
This item is discontinued. Please contact customer service at 512.836.1667 if you would like assistance finding an alternative item.

Details

JT Baker® CLk™-228 Post-Etch Fluoropolymer Residue Remover


Large Feature Size Platform:

JT Baker CLk-228 post-etch residue remover, as with all products from the J.T.Baker CLk series, offers increased process margins for post-etch residue removal and sacrificial layer removal. The CLĸ Series of materials also allows consolidation of wet chemistries and the removal of process operations, lowering the cost of ownership for wet process.


Porous dielectric material has been introduced at the sub 32 nm technology node. These highly sensitive materials are prone to significant damage by both plasma etch processes and traditional fluoride based cleaners (dHF). The integration of TiN metal hard masks provides extremely high etch selectivity towards these dielectric materials. However, TiN hard masks introduce other issues such as metal contamination and growth of Ti based residues on the top of the hard mask. These Ti based residues (TiFx like) can be removed with fluoride based cleaning formulations but this chemistry will also attack the etch damaged low-k film resulting in CD loss. The residues can be avoided entirely through the use of a post etch fluoropolymer deposition treatment via a Ar/N2/C4F8/CH3F plasma to promote the polymer formation. After the etch and polymer deposition there will be no Ti based residues to remove and you can achieve your clean using J.T.Baker® Clk-228 residue remover which is capable of efficient fluropolymer removal and is extremely compatible with porous low-k dielectrics and copper.

Documents & Videos

JT Baker® CLk™-228 Post-Etch Fluoropolymer Residue Remover


Large Feature Size Platform:

JT Baker CLk-228 post-etch residue remover, as with all products from the J.T.Baker CLk series, offers increased process margins for post-etch residue removal and sacrificial layer removal. The CLĸ Series of materials also allows consolidation of wet chemistries and the removal of process operations, lowering the cost of ownership for wet process.


Porous dielectric material has been introduced at the sub 32 nm technology node. These highly sensitive materials are prone to significant damage by both plasma etch processes and traditional fluoride based cleaners (dHF). The integration of TiN metal hard masks provides extremely high etch selectivity towards these dielectric materials. However, TiN hard masks introduce other issues such as metal contamination and growth of Ti based residues on the top of the hard mask. These Ti based residues (TiFx like) can be removed with fluoride based cleaning formulations but this chemistry will also attack the etch damaged low-k film resulting in CD loss. The residues can be avoided entirely through the use of a post etch fluoropolymer deposition treatment via a Ar/N2/C4F8/CH3F plasma to promote the polymer formation. After the etch and polymer deposition there will be no Ti based residues to remove and you can achieve your clean using J.T.Baker® Clk-228 residue remover which is capable of efficient fluropolymer removal and is extremely compatible with porous low-k dielectrics and copper.

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