KMG Electronic Chemicals 041228 Ultra Etch® NP 10:1 Buffered Oxide Etchant, 1 Gallon Poly Bottle (Case of 4)
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- Wet chemical etching is an integral part of semiconductor manufacturing process. KMG’s line of buffered oxide etchants offers a variety of silicon dioxide etching rates and characteristics to meet your processing needs.
- Assay (HF): 4.50 to 4.71%
- Assay (NH4F): 35.7 to 36.7%
- Surface Tension: 23 Dynes/cm
- 0.5μ Particle Count: 200 Par/mL; 1.0μ Particle Count: 20 Par/mL
- Case of 4 x 1 Gallon Poly Bottles
- Manufacturer Part No: 41228
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Wet chemical etching is an integral part of semiconductor manufacturing process. KMG’s line of buffered oxide etchants offers a variety of silicon dioxide etching rates and characteristics to meet your processing needs. The family includes standard BOEs, Ultra Etch® surfactanated BOEs, Ultra Etch® LFE (low fluoride etchants) and custom blends.
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Wet chemical etching is an integral part of semiconductor manufacturing process. KMG’s line of buffered oxide etchants offers a variety of silicon dioxide etching rates and characteristics to meet your processing needs. The family includes standard BOEs, Ultra Etch® surfactanated BOEs, Ultra Etch® LFE (low fluoride etchants) and custom blends.