Transene TRANSETCH N Selective Etchant for Gallium Nitride, Silicon Nitride or Aluminum Oxide Films, 4 x 1 Gallon
Notice: Hazardous chemicals and products will incur additional Hazmat Fees and/or mandatory shipment via LTL Motor Freight
- Convenient, ready to use, re-usable, does not weaken with use
- Selective, etches gallium nitride, silicon nitride or aluminum oxide films
- Produces no noxious fumes, requires no hoods or venting
- Virtually eliminates over-etching and under-cutting
- Ensures successful planar passivation of silicon semiconductor devices
- Case of 4 x 1-Gallon
- Manufacturer Part No: TRA-TRANSETCH N
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Details
TRANSETCH-N is a purified reagent, derived from ortho-phosphoric acid, which selectively etches silicon nitride or aluminum oxide in the presence of silicon dioxide or silicon. When used as directed, it produces openings in these films with a degree of resolution comparable to the best obtainable with SiO2 in conventional planar technology, but with essentially no effect on exposed silicon or silicon dioxide surfaces. The photoresist materials, processes and equipment used in conventional etching operations are retained, and the additional equipment required is minimal and inexpensive. Note: Many photoresists may not be able to withstand the recommended operating temperature of Transech N. Consult your resist manufacturer before proceeding. Transetch-N contains no fluorides. Unlike etchants based on fluoride chemistry, TRANSETCH-N produces minimal undercutting and therefore provides a wide margin of safety in the selection of etching times. Transetch-N is stable and long-lived. The only attention which it may require in use is the addition of small amounts of water to replace that lost through evaporation.
Documents & Videos
TRANSETCH-N is a purified reagent, derived from ortho-phosphoric acid, which selectively etches silicon nitride or aluminum oxide in the presence of silicon dioxide or silicon. When used as directed, it produces openings in these films with a degree of resolution comparable to the best obtainable with SiO2 in conventional planar technology, but with essentially no effect on exposed silicon or silicon dioxide surfaces. The photoresist materials, processes and equipment used in conventional etching operations are retained, and the additional equipment required is minimal and inexpensive. Note: Many photoresists may not be able to withstand the recommended operating temperature of Transech N. Consult your resist manufacturer before proceeding. Transetch-N contains no fluorides. Unlike etchants based on fluoride chemistry, TRANSETCH-N produces minimal undercutting and therefore provides a wide margin of safety in the selection of etching times. Transetch-N is stable and long-lived. The only attention which it may require in use is the addition of small amounts of water to replace that lost through evaporation.