JT Baker® 0702-05 Ammonium Fluoride, 40%, CMOS Electronic Grade, 7Lb Poly Bottle (Case of 4)

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  • Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
  • CMOS™ Grade
  • Trace Impurity Level: 200 to 10ppb
  • SEMI Grade: 1
  • 4 x 7Lb Poly Bottles/Case (Cases Only)
  • Manufacturer Part No: JT-0702-05
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Item Number: JTB-0702-05
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Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
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Typical Analysis Monograph

Assay (NH4F) 39.0 - 41.0 %
Color (APHA) 10 max.
pH of 1% Solution at 25°C 6.5 - 7.0
Residue after Ignition 5 ppm max.
Trace Impurities (in ppm):
Chloride (Cl) 2 max.
Insoluble Matter 0.5 max.
Nitrate (NO3) 5 max.
Oxidizable Species (as SO3) 1 max.
Phosphate (PO4) 0.2 max.
Sulfate (SO4) 1 max.
Trace Impurities (in ppb):
Aluminum (Al) 50 max.
Antimony (Sb) 10 max.
Arsenic (As) 20 max.
Arsenic and Antimony (as As) 30 max.
Barium (Ba) 10 max.
Beryllium (Be) 5 max.
Bismuth (Bi) 50 max.
Boron (B) 20 max.
Cadmium (Cd) 20 max.
Calcium (Ca) 10 max.
Chromium (Cr) 10 max.
Cobalt (Co) 10 max.
Copper (Cu) 10 max.
Gallium (Ga) 50 max.
Germanium (Ge) 40 max.
Gold (Au) 20 max.
Heavy Metals (as Pb) 500 max.
Iron (Fe) 50 max.
Lead (Pb) 50 max.
Lithium (Li) 10 max.
Magnesium (Mg) 10 max.
Manganese (Mn) 20 max.
Molybdenum (Mo) 50 max.
Nickel (Ni) 50 max.
Niobium (Nb) 20 max.
Potassium (K) 100 max.
Silver (Ag) 10 max.
Sodium (Na) 50 max.
Strontium (Sr) 10 max.
Tantalum (Ta) 50 max.
Thallium (Tl) 20 max.
Tin (Sn) 50 max.
Titanium (Ti) 50 max.
Vanadium (V) 10 max.
Zinc (Zn) 20 max.
Zirconium (Zr) 5 max.
Particle Count, per ml:
0.5 um and greater 100 max.
1.0 um and greater 25 max.
Reported value is the average of all samples counted for this lot number,
with no individual sample value exceeding the specification.
For Microelectronic Use

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Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
_________________________________


Typical Analysis Monograph

Assay (NH4F) 39.0 - 41.0 %
Color (APHA) 10 max.
pH of 1% Solution at 25°C 6.5 - 7.0
Residue after Ignition 5 ppm max.
Trace Impurities (in ppm):
Chloride (Cl) 2 max.
Insoluble Matter 0.5 max.
Nitrate (NO3) 5 max.
Oxidizable Species (as SO3) 1 max.
Phosphate (PO4) 0.2 max.
Sulfate (SO4) 1 max.
Trace Impurities (in ppb):
Aluminum (Al) 50 max.
Antimony (Sb) 10 max.
Arsenic (As) 20 max.
Arsenic and Antimony (as As) 30 max.
Barium (Ba) 10 max.
Beryllium (Be) 5 max.
Bismuth (Bi) 50 max.
Boron (B) 20 max.
Cadmium (Cd) 20 max.
Calcium (Ca) 10 max.
Chromium (Cr) 10 max.
Cobalt (Co) 10 max.
Copper (Cu) 10 max.
Gallium (Ga) 50 max.
Germanium (Ge) 40 max.
Gold (Au) 20 max.
Heavy Metals (as Pb) 500 max.
Iron (Fe) 50 max.
Lead (Pb) 50 max.
Lithium (Li) 10 max.
Magnesium (Mg) 10 max.
Manganese (Mn) 20 max.
Molybdenum (Mo) 50 max.
Nickel (Ni) 50 max.
Niobium (Nb) 20 max.
Potassium (K) 100 max.
Silver (Ag) 10 max.
Sodium (Na) 50 max.
Strontium (Sr) 10 max.
Tantalum (Ta) 50 max.
Thallium (Tl) 20 max.
Tin (Sn) 50 max.
Titanium (Ti) 50 max.
Vanadium (V) 10 max.
Zinc (Zn) 20 max.
Zirconium (Zr) 5 max.
Particle Count, per ml:
0.5 um and greater 100 max.
1.0 um and greater 25 max.
Reported value is the average of all samples counted for this lot number,
with no individual sample value exceeding the specification.
For Microelectronic Use

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