JT Baker® 0712-09 Ammonium Fluoride, 40%, CMOS Electronic Grade, 500Lb Poly Drum
Item Number:JTB-0712-09
Manufacturer Part No:JT-0712-09
Manufacturer:Avantor
Units:500Lb Poly Drum
Details
- CMOS™ Grade
- Trace Impurity Level: 200 to 10ppb
- SEMI Grade: 1
- 500Lb Poly Drum
Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
__________________________________________
__________________________________________
Typical Analysis Monograph
| Assay (NH4F) | 39.0 - 41.0 % | 40.3 % |
| Color (APHA) | 10 max. | 5 |
| pH of 1% Solution at 25°C | 6.5 - 7.0 | 6.9 |
| Residue after Ignition | 5 ppm max. | < 2 ppm |
| Trace Impurities (in ppm): | ||
| Chloride (Cl) | 2 max. | < 2 |
| Insoluble Matter | 0.5 max. | < 0.3 |
| Nitrate (NO3) | 5 max. | < 1 |
| Oxidizable Species (as SO3) | 1 max. | < 1 |
| Phosphate (PO4) | 0.2 max. | < 0.2 |
| Sulfate (SO4) | 1 max. | < 1 |
| Trace Impurities (in ppb): | ||
| Aluminum (Al) | 50 max. | < 5 |
| Antimony (Sb) | 10 max. | < 1 |
| Arsenic (As) | 20 max. | < 2 |
| Arsenic and Antimony (as As) | 30 max. | < 5 |
| Barium (Ba) | 10 max. | < 1 |
| Beryllium (Be) | 5 max. | < 1 |
| Bismuth (Bi) | 50 max. | < 10 |
| Boron (B) | 20 max. | < 5 |
| Cadmium (Cd) | 20 max. | < 1 |
| Calcium (Ca) | 10 max. | 2 |
| Chromium (Cr) | 10 max. | < 1 |
| Cobalt (Co) | 10 max. | < 1 |
| Copper (Cu) | 10 max. | < 1 |
| Gallium (Ga) | 50 max. | < 1 |
| Germanium (Ge) | 40 max. | < 10 |
| Gold (Au) | 20 max. | < 5 |
| Heavy Metals (as Pb) | 500 max. | < 500 |
| Iron (Fe) | 50 max. | 1 |
| Lead (Pb) | 50 max. | < 10 |
| Lithium (Li) | 10 max. | < 1 |
| Magnesium (Mg) | 10 max. | < 1 |
| Manganese (Mn) | 20 max. | < 1 |
| Molybdenum (Mo) | 50 max. | < 5 |
| Nickel (Ni) | 50 max. | < 5 |
| Niobium (Nb) | 20 max. | < 1 |
| Potassium (K) | 100 max. | < 10 |
| Silver (Ag) | 10 max. | < 1 |
| Sodium (Na) | 50 max. | < 5 |
| Strontium (Sr) | 10 max. | < 1 |
| Tantalum (Ta) | 50 max. | < 5 |
| Thallium (Tl) | 20 max. | < 5 |
| Tin (Sn) | 50 max. | < 10 |
| Titanium (Ti) | 50 max. | < 1 |
| Vanadium (V) | 10 max. | < 1 |
| Zinc (Zn) | 20 max. | < 1 |
| Zirconium (Zr) | 5 max. | < 1 |
| For Microelectronic Use | ||
Documents & Videos
Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
__________________________________________
__________________________________________
Typical Analysis Monograph
| Assay (NH4F) | 39.0 - 41.0 % | 40.3 % |
| Color (APHA) | 10 max. | 5 |
| pH of 1% Solution at 25°C | 6.5 - 7.0 | 6.9 |
| Residue after Ignition | 5 ppm max. | < 2 ppm |
| Trace Impurities (in ppm): | ||
| Chloride (Cl) | 2 max. | < 2 |
| Insoluble Matter | 0.5 max. | < 0.3 |
| Nitrate (NO3) | 5 max. | < 1 |
| Oxidizable Species (as SO3) | 1 max. | < 1 |
| Phosphate (PO4) | 0.2 max. | < 0.2 |
| Sulfate (SO4) | 1 max. | < 1 |
| Trace Impurities (in ppb): | ||
| Aluminum (Al) | 50 max. | < 5 |
| Antimony (Sb) | 10 max. | < 1 |
| Arsenic (As) | 20 max. | < 2 |
| Arsenic and Antimony (as As) | 30 max. | < 5 |
| Barium (Ba) | 10 max. | < 1 |
| Beryllium (Be) | 5 max. | < 1 |
| Bismuth (Bi) | 50 max. | < 10 |
| Boron (B) | 20 max. | < 5 |
| Cadmium (Cd) | 20 max. | < 1 |
| Calcium (Ca) | 10 max. | 2 |
| Chromium (Cr) | 10 max. | < 1 |
| Cobalt (Co) | 10 max. | < 1 |
| Copper (Cu) | 10 max. | < 1 |
| Gallium (Ga) | 50 max. | < 1 |
| Germanium (Ge) | 40 max. | < 10 |
| Gold (Au) | 20 max. | < 5 |
| Heavy Metals (as Pb) | 500 max. | < 500 |
| Iron (Fe) | 50 max. | 1 |
| Lead (Pb) | 50 max. | < 10 |
| Lithium (Li) | 10 max. | < 1 |
| Magnesium (Mg) | 10 max. | < 1 |
| Manganese (Mn) | 20 max. | < 1 |
| Molybdenum (Mo) | 50 max. | < 5 |
| Nickel (Ni) | 50 max. | < 5 |
| Niobium (Nb) | 20 max. | < 1 |
| Potassium (K) | 100 max. | < 10 |
| Silver (Ag) | 10 max. | < 1 |
| Sodium (Na) | 50 max. | < 5 |
| Strontium (Sr) | 10 max. | < 1 |
| Tantalum (Ta) | 50 max. | < 5 |
| Thallium (Tl) | 20 max. | < 5 |
| Tin (Sn) | 50 max. | < 10 |
| Titanium (Ti) | 50 max. | < 1 |
| Vanadium (V) | 10 max. | < 1 |
| Zinc (Zn) | 20 max. | < 1 |
| Zirconium (Zr) | 5 max. | < 1 |
| For Microelectronic Use | ||