Cyantek® KMG 210034 Nano-Strip® Photoresist Stripper (Case of 4 x 1-Gallons)

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Item Number: KMG-210034



KMG Electronic Materials Nano-Strip® is a stabilized formulation of sulfuric acid and hydrogen peroxide compounds. It removes positive and nega­tive resists and other organic materials used in various applica­tions of semiconductor photolithography. It contains high purity reagents required for high yield semiconductor manufacturing.

Increased stripping capacity and bath life:
Nano-Strip® has a bath life which may be extended up to a week depending on the nature of the photoresist and the conditions of the process.

Batch-to-batch consistency:
Nano-Strip® is a single and stable solution, ready to be used directly out of the container. There is no need to use additional chemicals. Since no mixing is required, potential errors and further chemical handling are eliminated. Its performance is consistent and stable.

Safe and easy to use:
Nano-Strip® strips and cleans organic and inorganic contamination effectively at room temperature or may be used at elevated temperatures to promote more effective stripping.  It contains no phenols, chlorinated solvents, and toxic fumes that can endanger operators or damage process equipment. Nano-Strip® can be used in recirculating filtration tanks to prevent particle build-up, promote agitation, resulting in a longer bath life.

High Purity:
Nano-Strip® is filtered to 0.1 micron. Each bottle is double-bagged. High Purity chemicals are used in its manufacture. This results in lower device defect levels. Several grades are available including one with a 1ppb metal specification.

Low and controlled rate of metal attack:
Deterioration of metal surfaces during stripping is negligible compared to other acid stripping formulas. Corrosion of aluminum layers is minimal, and Nano-Strip® leaves no organic residues.

Reduced Waste:

Nano-Strip® has a long extended bath life compared to standard Sulfuric Acid / Hydrogen Peroxide baths. Hazardous acid waste is minimized and the cost of waste treatment is dramatically reduced. Nano-Strip® may reduce chemical volumes and therefore waste by as much as 70%.

Effects on Metals:

Nano-Strip® will not attack chrome, chro­me oxide, gold or silicon dioxide. It has only minimal effect on copper, tantalum silicide(TaSi), itanium tungsten(TiW),indium tin oxide(ITO), aluminum and aluminum alloys(Al-Si and Al-Si-Cu). Etch rate of aluminum substrates is ap­proximately 35A /min at 20°C.

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